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고해상도 오실로스코프를 이용한 PSD 스위칭 측정

관리자 2025-12-02 조회수 463
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고해상도 오실로스코프를 이용한 PSD 스위칭 측정

이슈 :

스위칭 손실(예시에서 "Power")은 스위칭 주기(턴 온/턴 오프) 동안 출력 전압(VDS)과 전류(Id)를 곱하여 계산됩니다. 출력 전압이 수백 볼트일 때 ON 전압은 몇 볼트에 불과하지만, 일반적인 8비트 오실로스코프에서는 AD 해상도가 1~2 비트에 불과하여 정확한 측정이 불가능합니다. 


솔루션 :

12비트 ADC를 탑재한 DLM5000HD는 기존의 8비트 오실로스코프보다 16배 높은 해상도를 제공하여, 넓은 동적 범위 측정에 이상적입니다. 또한, SiC/GaN과 같은 차세대 소자는 고속 상승 스위칭 전압을 가지며, 이로 인해 고전압 링잉이 발생할 수 있습니다. 이 링잉 억제는 인버터 설계에서 중요한 요소입니다. 고해상도 오실로스코프는 이러한 링잉/노이즈 관찰에도 매우 효과적입니다.



Example: SiC MOSFET double pulse test waveform

예시: SiC MOSFET 더블 펄스 테스트 파형 



PSD Switching Measurement with High Definition Oscilloscope

Issue:

The switching loss ("Power" in the example) is calculated by multiplying the output voltage(VDS) and current(Id) in the switching period (turn ON/turn OFF). The ON voltage is only a few volts for an output voltage of several hundred volts, but with a typical 8-bit oscilloscope, this is only 1 to 2 bits of AD resolution, and highly accurate measurements are not possible.

Solution:

The DLM5000HD with 12-bit ADC has 16 times the resolution of conventional 8-bit oscilloscopes, making it ideal for such wide dynamic range measurements. In addition, next-generation devices such as SiC/GaN have a high-speed rising switching voltage, which causes high-voltage ringing, and suppressing it is an important point in designing inverters.  High Definition Oscilloscope is also effective for such ringing/noise observations.




Example: SiC MOSFET double pulse test waveform

Example: SiC MOSFET double pulse test waveform

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